▎ 摘　　要

We demonstrate permanent water trapping in reduced graphene oxide after high relative humidity exposure. For this purpose, we grew graphene oxide films via spin-coating on glass substrates followed by thermal reduction. The electrical resistance of the planar device was then measured. We observed that resistance is significantly increased after water vapor exposure and remains stable even after 250 days in ambient conditions. Various techniques were applied to desorb the water and decrease (recover) the material's resistance, but it was achieved only with low temperature thermal annealing (180 degrees C) under forming gas (H-2/N-2 mixture). The permanent effect of water absorption was also detected by x-ray photoelectron spectroscopy. Published by AIP Publishing.