• 文献标题:   Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots
  • 文献类型:   Article
  • 作  者:   EICH M, PISONI R, OVERWEG H, KURZMANN A, LEE Y, RICKHAUS P, IHN T, ENSSLIN K, HERMAN F, SIGRIST M, WATANABE K, TANIGUCHI T
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW X
  • ISSN:   2160-3308
  • 通讯作者地址:   Swiss Fed Inst Technol
  • 被引频次:   12
  • DOI:   10.1103/PhysRevX.8.031023
  • 出版年:   2018

▎ 摘  要

In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers n = 1, 2,...50 can be filled successively into the quantum system with charging energies exceeding 10 meV. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of g(s) approximate to 2. In the low-field limit, the valley splitting depends linearly on the perpendicular magnetic field and is in qualitative agreement with calculations.