▎ 摘　　要

Vertical graphene heterostructures made up of graphene layers separated by boron nitride spacers allow for novel ways of tuning the interactions between electrons. We study the possibility of electron pairing mediated by modified repulsive interactions. Long-range intravalley and short-range intervalley interactions give rise to different anisotropic phases. We show that a superconducting state with gaps of opposite signs in different valleys, an odd momentum pairing state, can exist above carrier densities of 5-10 x 10(13) cm(-2). The dependence of the transition temperature on the different parameters of the devices is studied in detail.