• 文献标题:   Reversible Activated Transport to Hopping Conduction Transition in Graphene Layers: Molecular Adsorption Induced Defect States
  • 文献类型:   Article
  • 作  者:   KUMAR R, VARANDANI D, MEHTA BR
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF THE ELECTROCHEMICAL SOCIETY
  • ISSN:   0013-4651 EI 1945-7111
  • 通讯作者地址:   Indian Inst Technol Delhi
  • 被引频次:   0
  • DOI:   10.1149/2.0941610jes
  • 出版年:   2016

▎ 摘  要

In this study, a transition from activated conduction mechanism to variable range carrier hopping conduction mechanism is observed on adsorption of H-2, Ar and O-2 molecules onto graphene layers in the temperature range from 173 K to 373 K. A fast switching (<100 s), recovery (<300 s), completely reversible behavior and lack of dependence on nature of the molecules show that physical adsorption of gas molecules results in appearance of defect states in the bandgap of graphene. These results provide further understanding of electrical conduction mechanism in graphene and are important for its applications in gas sensing and hydrogen storage devices. (C) 2016 The Electrochemical Society. All rights reserved.