▎ 摘　　要

Epitaxial graphene layers grown on single-crystal SiC have large structural coherence domains and can be easily patterned into submicron structures using standard microelectronics lithography techniques. Pattemed structures show two-dimensional electron gas properties with mobilities exceeding 3 m(2)/Vs. Magnetotransport measurements (Shubnikov-de Haas oscillations) indicate that the transport properties are dominated by the highly doped graphene layer at the silicon carbide interface. They reveal the Dirac nature of the charge carriers as predicted for a single graphene layer. The properties of Dirac fermions can be conveniently explored in epitaxial graphene with long electronic phase coherence at the micron scale. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.