▎ 摘　　要

The effect of device fabrication processing conditions is often overlooked in the evaluation of the contact resistance in metal-graphene contact. In this work, we investigate the Ti-graphene contact resistance theoretically and experimentally. A compact model has been proposed to reveal and evaluate the role of different factors in controlling the value of contact resistance. A layer of oxidized Ti or polymer residues at the Ti-graphene interface has been considered to explain the reduced carrier transmission probability through the interface. Experimental results report a low contact resistance as small as 271.45 Omega center dot mu m and our model agrees with the measured values. The proposed model explains the large variation of the contact resistance reported in the literature up to date and help to improvemetal-graphene contact for future applications.