▎ 摘　　要

Most of the potential applications of memristive devices adopt crossbar architecture for ultra-high density. One of the biggest challenges of the crossbar architecture is severe residue leakage current (sneak path) issue. A possible solution is introducing a selector device with strong nonlinear current-voltage (I-V) characteristics in series with each memristor in crossbar arrays. Here, we demonstrate a novel selector device based on graphene-oxide heterostructures, which successfully converts a typical linear TaO (x) memristor into a nonlinear device. The origin of the nonlinearity in the heterostructures is studied in detail, which highlights an important role of the graphene-oxide interfaces.