▎ 摘　　要

The structural and electronic properties of twisted bilayer graphene (TBG) on SiC(000 (1) over bar) grown by Si flux-assisted molecular beam epitaxy were investigated using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy with nanometric spatial resolution. STM images revealed a wide distribution of twist angles between the two graphene layers. The electronic structure recorded in single TBG grains showed two closely-spaced Dirac pi bands associated to the two stacked layers with respective twist angles in the range 1-3 degrees. The renormalization of velocity predicted in previous theoretical calculations for small twist angles was not observed.