▎ 摘　　要

The structure of graphene layers grown by sublimation on a 6H-SiC (000) substrate surface is studied by electron diffraction depending on the sublimation temperature and substrate-surface pretreatment method. It is shown that the use of polishing sublimation etching of the substrate before thermal destruction at a temperature of 1350A degrees C on the substrate surface results in the formation of single-crystal graphene domains with graphene-lattice rotation by 30A degrees with respect to the SiC lattice and a small fraction of amorphous domains. An increase in the temperature to 1500A degrees C leads to the partial formation of a polycrystalline graphene phase with turbostratic structure while retaining the preferred orientation of graphene crystallites as at 1350A degrees C. The use of pregrowth annealing before thermal destruction makes it possible to grow a graphene film with a more ordered and homogeneous structure without inclusions of amorphous and polycrystalline components. The preferred orientation of graphene domains in the film remains unchanged.