• 文献标题:   Scandium Decoration of Boron Doped Porous Graphene for High-Capacity Hydrogen Storage
  • 文献类型:   Article
  • 作  者:   WANG J, CHEN YH, YUAN LH, ZHANG ML, ZHANG CR
  • 作者关键词:   first principle, porous graphene, b doped sc modified pg, hydrogen storage
  • 出版物名称:   MOLECULES
  • ISSN:  
  • 通讯作者地址:   Lanzhou Univ Technol
  • 被引频次:   5
  • DOI:   10.3390/molecules24132382
  • 出版年:   2019

▎ 摘  要

The hydrogen storage properties of the Scandium (Sc) atom modified Boron (B) doped porous graphene (PG) system were studied based on the density functional theory (DFT). For a single Sc atom, the most stable adsorption position on B-PG is the boron-carbon hexagon center after doping with the B atom. The corresponding adsorption energy of Sc atoms was -4.004 eV. Meanwhile, five H-2 molecules could be adsorbed around a Sc atom with the average adsorption energy of -0.515 eV/H-2. Analyzing the density of states (DOS) and the charge population of the system, the adsorption of H-2 molecules in Sc-B/PG system is mainly attributed to an orbital interaction between H and Sc atoms. For the H-2 adsorption, the Coulomb attraction between H-2 molecules (negatively charged) and Sc atoms (positively charged) also played a critical role. The largest hydrogen storage capacity structure was two Sc atoms located at two sides of the boron-carbon hexagon center in the Sc-B/PG system. Notably, the theoretical hydrogen storage capacity was 9.13 wt.% with an average adsorption energy of -0.225 eV/H-2. B doped PG prevents the Sc atom aggregating and improves the hydrogen storage effectively because it can increase the adsorption energy of the Sc atom and H-2 molecule.