▎ 摘　　要

Graphene grown on the SiC( 0 0 0 (1) over bar) surface is unique. Unlike graphene grown on the ( 0 0 0 (1) over bar) surface, graphene grown on the ( 0 0 0 (1) over bar) surface has higher electron mobilities and an unusual non-Bernal stacking. Its different electronic properties are associated with its stacking and the graphene-SiC interface. In this paper we discuss what is known about the structure of this material. In particular we will discuss the ordering in this material and how it is related to the interface structure. We update new ideas about the interface and stacking and contrast it with works from other groups. New evidence for how Si is removed from the interface is also given that provides some insight into the growth process and shows that graphene nucleation is not confined to screw dislocations. This has important implications for the viability of patterned graphene growth.