▎ 摘　　要

Graphene has attracted great interest in optoelectronics, owing to its high carrier mobility and broadband absorption. However, a graphene photodetector exhibits low photoresponsivity because of its weak light absorption. In this work, we designed a graphene/MoSe2 heterostructure photodetector, which exhibits photoresponse ranging from visible to near infrared and an ultrahigh photoresponsivity up to 1.3 x 10(4) A . W-1 at 550 nm. The electron-hole pairs are excited in a few-layered MoSe2 and separated by the built-in electric field. A large number of electrons shift to graphene, while the holes remain in the MoSe2, which creates a photogating effect.