• 文献标题:   Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate
  • 文献类型:   Article
  • 作  者:   SOMEYA T, FUKIDOME H, ISHIDA Y, YOSHIDA R, IIMORI T, YUKAWA R, AKIKUBO K, YAMAMOTO S, YAMAMOTO S, YAMAMOTO T, KANAI T, FUNAKUBO K, SUEMITSU M, ITATANI J, KOMORI F, SHIN S, MATSUDA I
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Tokyo
  • 被引频次:   12
  • DOI:   10.1063/1.4871381
  • 出版年:   2014

▎ 摘  要

Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi-Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron-electron scattering, and the observed electronic temperature indicates cascade carrier multiplication. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.