• 文献标题:   Technology/Circuit/System Co-Optimization and Benchmarking for Multilayer Graphene Interconnects at Sub-10-nm Technology Node
  • 文献类型:   Article
  • 作  者:   PAN CY, RAGHAVAN P, CEYHAN A, CATTHOOR F, TOKEI Z, NAEEMI A
  • 作者关键词:   32bit adder, arm core, delay, energydelay product edp, multilayer graphene interconnect, performance
  • 出版物名称:   IEEE TRANSACTIONS ON ELECTRON DEVICES
  • ISSN:   0018-9383 EI 1557-9646
  • 通讯作者地址:   Georgia Inst Technol
  • 被引频次:   12
  • DOI:   10.1109/TED.2015.2409875
  • 出版年:   2015

▎ 摘  要

Based on realistic circuit-and system-level simulations, graphene interconnects are analyzed in terms of multiple material properties, such as the mean free path (MFP), the contact resistance, and the edge roughness. The bench-marking results indicate that the advantage of using graphene interconnects occurs only under certain circumstances. The device-level parameters, including the supply and threshold voltages, and the circuit-level parameters, including the wire length and width, have large impacts on both the delay and energy-delay product (EDP). At the circuit level, one representative circuit, a 32-bit adder, is investigated, where up to 40% and 70% improvements in delay and EDP are observed. At the system-level analysis, an ARM Cortex-M0 processor is synthesized, and placement and routing are performed. After replacing copper interconnects with multilayer graphene interconnects, up to 15% and 22% performance improvements in clock frequency and EDP have been observed. It is also demonstrated that the benefits of using graphene for the ARM core processor are strongly dependent on the quality of the graphene, such as the MFP and the edge roughness.