• 文献标题:   Effect of anisotropic band curvature on carrier multiplication in graphene
  • 文献类型:   Article
  • 作  者:   BASKO DM
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Univ Grenoble 1
  • 被引频次:   14
  • DOI:   10.1103/PhysRevB.87.165437
  • 出版年:   2013

▎ 摘  要

We study relaxation of an excited electron in the conduction band of intrinsic graphene at zero temperature due to production of interband electron-hole pairs by Coulomb interaction. The electronic band curvature, being anisotropic because of trigonal warping, is shown to suppress relaxation for a range of directions of the initial electron momentum. For other directions, relaxation is allowed only if the curvature exceeds a finite critical value; otherwise, a nondecaying quasiparticle state is found to exist. DOI: 10.1103/PhysRevB.87.165437