▎ 摘　　要

Integrating graphene with other highly light absorptive materials into heterostructures is of great interest to improve the optoelectronic properties of graphene based phototransistors. Here, we fabricated a hybrid graphene-CsPbBr3 nanocrystal (NCs) phototransistor using CsPbBr3 NCs with large absorption coefficient as light absorption materials and graphene with high mobility as charge transport layer. The graphene-CsPbBr3 NCs phototransistor showed high photo response performances with responsivity (R) of 0.54 A/W at the incident light irradiation (E-e) of 56 mW/cm(2). Moreover, the phototransistor exhibited rapid photo response with rise/decay time of 38/58 ms. The hybrid phototransistor has great potential applications in the photodetection and multifunction optoelectronics.