▎ 摘　　要

We report the growth of graphene by solid carbon source on full 8-inch wafers. The first step is to deposit the fine-tuned carbon source and the nickel catalyst thin films on top. The second step is to anneal the stack for driving carbon throughout the catalyst and grow graphene upon the surface. The graphene can be optimized by tuning the stack design and the annealing conditions. Via this method, graphene with a transmittance of 91.9% and a sheet resistance of 565 Ohm/sq has been obtained. Our technique provides a rapid route to grow large scale graphene using standard microelectronic facilities. (C) 2013 Elsevier Ltd. All rights reserved.