• 文献标题:   Excitonic bandgap dependence on stacking configuration in four layer graphene
  • 文献类型:   Article
  • 作  者:   LIU YP, GOOLAUP S, LEW WS, PURNAMA I, SEKHAR MC, ZHOU TJ, WONG SK
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Nanyang Technol Univ
  • 被引频次:   2
  • DOI:   10.1063/1.4825263
  • 出版年:   2013

▎ 摘  要

Different crystallographic stacking configurations in graphene provide an additional degree of freedom in the electronic structure. We have conducted systematic investigations of the transport properties of ABAB- and ABCA-stacked four-layer graphene. Our results reveal that ABAB and ABCA graphene exhibit markedly different properties as functions of both temperature and magnetic field. The temperature-dependant resistance measurement reveals that the excitonic gap of ABCA stacked graphene increases as a function of temperature, while for ABAB, a shrinking excitonic gap configuration is observed. (C) 2013 AIP Publishing LLC.