• 文献标题:   Liquid-phase growth of few-layered graphene on sapphire substrates using SiC micropowder source
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   MARUYAMA T, YAMASHITA Y, SAIDA T, TANAKA SI, NARITSUKA S
  • 作者关键词:   characterization, low dimensional structure, nanostructure, phase diagram, liquid phase epitaxy, nanomaterial
  • 出版物名称:   JOURNAL OF CRYSTAL GROWTH
  • ISSN:   0022-0248 EI 1873-5002
  • 通讯作者地址:   Meijo Univ
  • 被引频次:   0
  • DOI:   10.1016/j.jcrysgro.2016.11.053
  • 出版年:   2017

▎ 摘  要

We demonstrated direct synthesis of graphene films consisting of a few layers (few-layered graphene) on sapphire substrates by liquid-phase growth (LPG), using liquid Ga as the melt and SiC micropowder as the source material. When the dissolution temperature was above 700 degrees C, almost all Si atoms of SiC diffused into the Ga melt and only carbon atoms remained at the interface beneath the liquid Ga. Above 800 degrees C, X-ray photoelectron spectra showed that most of the remaining carbon was graphitized. When the dissolution temperature was 1000 degrees C, Raman spectra showed that few-layered graphene films grew on the sapphire substrates.