• 文献标题:   Vacancy defects and the formation of local haeckelite structures in graphene from tight-binding molecular dynamics
  • 文献类型:   Article
  • 作  者:   LEE GD, WANG CZ, YOON E, HWANG NM, HO KM
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Seoul Natl Univ
  • 被引频次:   72
  • DOI:   10.1103/PhysRevB.74.245411
  • 出版年:   2006

▎ 摘  要

The dynamics of multivacancy defects in a graphene layer is investigated by tight-binding molecular dynamics simulations and by first principles calculation. The simulations show that four single vacancies in the graphene layer first coalesce into two double vacancies, each consisting of a pentagon-heptagon-pentagon (5-8-5) defective structure. While one of the 5-8-5 defects further reconstructs into a 555-777 defect, which is composed of three pentagonal rings and three heptagonal rings, another 5-8-5 defect diffuses toward the reconstructed 555-777 defect. During the 5-8-5 defect diffusion process, three interesting mechanisms, i.e., "dimer diffusion," "chain diffusion," and "single atom diffusion," are observed. Finally, the four single vacancies reconstruct into two adjacent 555-777 defects, which is a local haeckelite structure.