▎ 摘　　要

In this paper, we report Raman mapping of graphene on AlGaN/GaN heterostructure on GaN/Si substrates. Graphene samples are prepared using exfoliation technique and transferred to AlGaN/GaN heterostructures with GaN and SiN cap layers. AlGaN induced charge accumulation is observed in graphene. Significant intensity reduction is observed in the Raman spectra in the AlGaN/GaN heterostructure peaks with graphene. We anticipate that this work provides further insights of graphene, AlGaN/GaN interfaces and can be used to further develop sensors and devices. (C) 2015 Elsevier B.V. All rights reserved.