▎ 摘　　要

A series of petaloid few-layer graphene-aggregated state multilayer graphene hybrid films with large areas (similar to 500 mm(2)) were made on Ni-coated Al2O3 ceramic substrate utilising a microwave plasma-assisted chemical vapour deposition method. Nickel layers were pretreated by laser etching technology. A Raman spectra, field emission scanning electron microscope and field emission I-V measurements were used for the detection of the film properties. Test results indicated that the laser etched region (groove region) and the un-etched region (prominent ridge region) surface topography had significant differences between the two, and a petaloid few-layer graphene film was found in the laser-etched region while in the un-etched region, an aggregated state multilayer graphene film was formed. The influence of the laser etching pretreatment on surface microstructure and morphologies of the graphene films was investigated. Moreover, synthesis mechanisms of the films were discussed. Field emission results showed a turn on the field was 4.5 V mu m(-1) and the current density was 0.1 mA cm(-2) in an electric field of 6.1 V mu m(-1).