• 文献标题:   Interfacial engineering of 0D/2D SnS2 heterostructure onto nitrogen-doped graphene for boosted lithium storage capability
  • 文献类型:   Article
  • 作  者:   GAO DD, WANG YR, LIU Y, SUN HP, WU MH, ZHANG HJ
  • 作者关键词:   sns2, ndoped graphene, 2d material, interfacial engineering, lithium storage
  • 出版物名称:   JOURNAL OF COLLOID INTERFACE SCIENCE
  • ISSN:   0021-9797 EI 1095-7103
  • 通讯作者地址:   Shanghai Univ
  • 被引频次:   10
  • DOI:   10.1016/j.jcis.2018.11.098
  • 出版年:   2019

▎ 摘  要

The interfacial engineering plays an important role in enhancing the electrochemical properties of graphene-based hybrid materials for energy conversion and storage. Herein, we propose a facile interfacial engineering route for achieving a novel type of SnS2/N-doped graphene (SnS2/NG) composite with superior lithium storage capability. Interestingly, the SnS2 particles formed show two totally different morphologies including ultrasmall nanoparticles about 5 nm and ultrathin nanosheets, and they are strongly coupled with nitrogen-doped graphene, giving rise to a unique 0D/2D heterostructure. In the process, the multiple roles of the 3-aminophenol (AP) linker are well identified by combining the experimental results with the theoretical calculations, where a strong interface is successfully constructed between SnS2 and functionalized graphene. The electrochemical test results demonstrate that the as made SnS2/NG composite exhibits a high lithium storage capacity (1101.3 mAh g(-1) at 100 mA g(-1)), superior cycling stability (a capability fading of 0.04% per cycle for 200 cycles at 100 mA g(-1)), as well as a good rate retention. Such a unique hierarchical nanostructure and the strong interfacial interaction between 0D/2D SnS2 and nitrogen-doped graphene highlight the lithium storage performance of SnS2/NG. (C) 2018 Elsevier Inc. All rights reserved.