• 文献标题:   Topological confinement in trilayer graphene
  • 文献类型:   Article
  • 作  者:   DE SENA SHR, PEREIRA JM, PEETERS FM, FARIAS GA
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121 EI 1550-235X
  • 通讯作者地址:   Univ Integracao Int Lusofonia Afrobrasileira
  • 被引频次:   3
  • DOI:   10.1103/PhysRevB.89.035420
  • 出版年:   2014

▎ 摘  要

We calculate the spectrum of states that are localized at the interface between two regions of opposite bias in trilayer graphene (TLG). These potential profiles, also known as potential kinks, have been predicted to support two different branches of localized states for the case of bilayer graphene, and show similarities to the surface states of topological insulators. On the other hand, we found that ABC stacked TLG exhibits three different unidimensional branches of states in each valley that are confined to the kink interface. They have the property E(k(y)) = -E(-k(y)) when belonging to the same valley and E-K(k(y)) = -E-K' (-k(y)). A kink-antikink potential profile opens a gap in the spectrum of these one-dimensional states.