▎ 摘　　要

High quality graphene-metal contacts are desirable for high-performance graphene based electronics. Process related factors result large variation in the contact resistance. A post-processing method is needed to improve graphene-metal contacts. In this letter, we studied rapid thermal annealing (RTA) of graphene-metal contacts. We present results of a systematic investigation of device scaling before and after RTA for various metals. The results reveal that RTA provides a convenient technique to reduce contact resistance, thus to obtain reproducible device operation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769817]