• 文献标题:   Electron-Induced Rippling in Graphene
  • 文献类型:   Article
  • 作  者:   SANJOSE P, GONZALEZ J, GUINEA F
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007
  • 通讯作者地址:   CSIC
  • 被引频次:   44
  • DOI:   10.1103/PhysRevLett.106.045502
  • 出版年:   2011

▎ 摘  要

We show that the interaction between flexural phonons, when corrected by the exchange of electron-hole excitations, may drive the graphene sheet into a quantum critical point characterized by the vanishing of the bending rigidity of the membrane. Ripples arise then due to spontaneous symmetry breaking, following a mechanism similar to that responsible for the condensation of the Higgs field in relativistic field theories, and leading to a zero-temperature buckling transition in which the order parameter is given by the square of the gradient of the flexural phonon field.