• 文献标题:   Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices
  • 文献类型:   Article
  • 作  者:   FARMER DB, GOLIZADEHMOJARAD R, PEREBEINOS V, LIN YM, TULEVSKI GS, TSANG JC, AVOURIS P
  • 作者关键词:  
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   IBM Corp
  • 被引频次:   364
  • DOI:   10.1021/nl803214a
  • 出版年:   2009

▎ 摘  要

We investigate poly(ethylene imine) and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.