• 文献标题:   Defect-Rich Graphene Architecture Induced by Nitrogen and Phosphorus Dual Doping for High-Performance Supercapacitors
  • 文献类型:   Article
  • 作  者:   WANG CN, LUO SY, YANG YY, REN DS, YU X
  • 作者关键词:   graphene architecture, heteroatoms doping, phosphoru, supercapacitor
  • 出版物名称:   ENERGY TECHNOLOGY
  • ISSN:   2194-4288 EI 2194-4296
  • 通讯作者地址:   Yangzhou Univ
  • 被引频次:   2
  • DOI:   10.1002/ente.201900685 EA SEP 2019
  • 出版年:   2020

▎ 摘  要

Heteroatom modification of graphene is a promising strategy to improve the electrochemical performance of supercapacitors. Herein, the heteroatom (N and P) dual-doped reduced graphene architecture (NP-rGA) is constructed via the combination of ice-template and thermal activation approaches. The interconnected morphology and surface chemical state of NP-rGA is confirmed by various microscopic and spectroscopic analyses. The formation of N- and P-containing functional groups acts as primary electroactive sites for the fast accommodation/relaxation of protons or electrons. Furthermore, NP-rGA exhibits a significant improvement in pseudocapacitive behavior in contrast to rGA, such as high specific capacitance (307.8 F g(-1)), excellent rate capability (85.7%), and cyclic stability of 100.1% of its initial cycle. These excellent electrochemical evidences can be assigned to the synergistic effect of hierarchical structure and uniform heteroatom (N and P) doping.