1. 平台首页
  2. 国际论文信息
  • 文献标题:   Substrate effect on the electronic structures of CuPc/graphene interfaces
  • 文献类型:   Article
  • 作　　者:   WU QH, HONG G, NG TW, LEE ST
  • 作者关键词:   chemical vapour deposition, electronic structure, graphene, interface state, interface structure, organic semiconductor, semiconductor growth, semiconductor thin film, surface ionisation, xray photoelectron spectra
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   City Univ Hong Kong
  • 被引频次:   25
  • DOI:   10.1063/1.3703766
  • 出版年:   2012

▎ 摘　　要

The interfacial electronic structures of copper phthalocyanine (CuPc) deposited on a single-layer graphene (SLG) film prepared on Cu and SiO2 substrates (SLG/Cu and SLG/SiO2) were investigated using ultraviolet photoelectron spectroscopy. The ionization energy of CuPc on SLG/Cu and SLG/SiO2 substrate is, respectively, 5.62 eV and 4.97 eV. The energy level alignments at the two interfaces were estimated. The results revealed that the height of the electron (hole) injection barriers are 1.20 (1.10) and 1.38 (0.92) eV at CuPc/SLG/Cu and CuPc/SLG/SiO2 interfaces, respectively. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3703766]