• 文献标题:   Phonons and electron-phonon coupling in graphene-h-BN heterostructures
  • 文献类型:   Article
  • 作  者:   SLOTMAN GJ, DE WIJS GA, FASOLINO A, KATSNELSON MI
  • 作者关键词:   two dimensional material, van der waals heterostructure, graphene, hbn, phonon
  • 出版物名称:   ANNALEN DER PHYSIK
  • ISSN:   0003-3804 EI 1521-3889
  • 通讯作者地址:   Radboud Univ Nijmegen
  • 被引频次:   18
  • DOI:   10.1002/andp.201400155
  • 出版年:   2014

▎ 摘  要

First principle calculations of the phonons of graphene-h-BN heterostructures are presented and compared to those of the constituents. It is shown that AA and AB stacking are not only energetically less favoured than AB but also dynamically unstable. Low energy flat phonon branches of h-BNcharacter with out of plane displacement have been identified and their coupling to electrons in graphene has been evaluated.