• 文献标题:   Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges
  • 文献类型:   Article
  • 作  者:   LIU L, PARK J, SIEGEL DA, MCCARTY KF, CLARK KW, DENG W, BASILE L, IDROBO JC, LI AP, GU G
  • 作者关键词:  
  • 出版物名称:   SCIENCE
  • ISSN:   0036-8075 EI 1095-9203
  • 通讯作者地址:   Oak Ridge Natl Lab
  • 被引频次:   285
  • DOI:   10.1126/science.1246137
  • 出版年:   2014

▎ 摘  要

By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-layer, in-plane heterostructure of a prototypical material system-graphene and hexagonal boron nitride (h-BN). Monolayer crystalline h-BN grew from fresh edges of monolayer graphene with atomic lattice coherence, forming an abrupt one-dimensional interface, or boundary. More important, the h-BN lattice orientation is solely determined by the graphene, forgoing configurations favored by the supporting copper substrate.