• 文献标题:   Chemical vapor deposition grown graphene on Cu-Pt alloys
  • 文献类型:   Article
  • 作  者:   ZHANG Y, FU YF, EDWARDS M, JEPPSON K, YE LL, LIU J
  • 作者关键词:   graphene, cupt, alloy, chemical vapor deposition
  • 出版物名称:   MATERIALS LETTERS
  • ISSN:   0167-577X EI 1873-4979
  • 通讯作者地址:   Chalmers Univ Technol
  • 被引频次:   4
  • DOI:   10.1016/j.matlet.2017.01.089
  • 出版年:   2017

▎ 摘  要

In this letter, the results from a series of experiments where graphene was grown on copper-platinum (Cu-Pt) alloy foils by chemical vapor deposition (CVD) are presented. By using Raman spectroscopy to analyze graphene films grown on Pt-Cu alloy foils with different Cu/Pt weight ratios (75/25, 50/50 and 25/75), we could show how the Cu/Pt weight ratio affected both the quality and the number of layers in the as-synthesized graphene films. Furthermore, graphene growth was shown to occur at temperatures as low as 750 degrees C due to what we believe is the strong catalytic ability of the Cu-Pt alloy foils. By keeping the flow rate of the CH4 precursor gas as low as 1.5 sccm, a low growth rate was obtained where the growth rates of monolayer and bilayer graphene could be controlled by simply adjusting the growth time. (C) 2017 Elsevier B.V. All rights reserved.