▎ 摘　　要

Transparent conducting film occupies an important position in various optoelectronic devices. To replace the costly tin-doped indium oxide (ITO), promising materials, such as metal nanowires and graphene, have been widely studied. Moreover, a long-pursued goal is to consolidate these two materials together and express their outstanding properties simultaneously. We successfully achieved a direct 3D coating of a graphene layer on an interlacing Cu nanosilks network by the low pressure chemical vapor deposition method. High aspect ratio Cu nanosilks (13 nm diameter with 40 mu m length) were synthesized through the nickel ion catalytic process. Large-size, transparent conducting film was successfully fabricated with Cu nanosilks ink by the imprint method. A magnetic manipulator equipped with a copper capsule was used to produce high Cu vapor pressure on Cu nanosilks and realize the graphene 3D-coating. The coated Cu@graphene nanosilks network achieved high transparency, low sheet resistance (41 Ohm sq(-1) at 95% transmittance) and robust antioxidant ability. With this technique, the transfer process of graphene is no longer needed, and a flexible, uniform and high-performance transparent conducting film could be fabricated in unlimited size.