▎ 摘　　要

Theoretically, it has been demonstrated that armchair Graphene nanoribbons (GNRs) can be divided into three families, i.e., N-a = 3p, N-a = 3p + 1, and N-a = 3p + 2 (here N-a is the number of dimer lines across the ribbon width and p is an integer), according to their electronic structures, and the energy gaps for the three families are quite different even with the same p. However, a systematic experimental verification of this fundamental prediction is still lacking, owing to very limited atomic-level control of the width of the armchair GNRs investigated. Here, we studied electronic structures of the armchair GNRs with atomically well-defined widths ranging from N-a = 6 to N-a = 26 by using a scanning tunneling microscope. Our result demonstrated explicitly that all the studied armchair GNRs exhibit semiconducting gaps and, more importantly, the observed gaps as a function of N-a are well grouped into the three categories, as predicted by density-functional theory calculations. Such a result indicated that the electronic properties of the armchair GNRs can be tuned dramatically by simply adding or cutting one carbon dimer line along the ribbon width.