• 文献标题:   Sulfonic-functionalized graphene oxide reinforced polyethersulfone nanocomposites with enhanced dielectric permittivity and EMI shielding effectiveness
  • 文献类型:   Article
  • 作  者:   AHMAD MW, DEY B, SAMMAR AA, CHOUDHURY A
  • 作者关键词:   sulfonicfunctionalized graphene oxide, polyethersulfone nanocomposite, dielectric propertie, emi shielding, thermal propertie
  • 出版物名称:   JOURNAL OF MACROMOLECULAR SCIENCE PART APURE APPLIED CHEMISTRY
  • ISSN:   1060-1325 EI 1520-5738
  • 通讯作者地址:   Dhofar Univ
  • 被引频次:   1
  • DOI:   10.1080/10601325.2020.1782228 EA JUN 2020
  • 出版年:   2020

▎ 摘  要

We have explored the sulfonic-functionalized graphene oxides (S-GOs) as an efficient conductive reinforcement to enhance the dielectric permittivity and electromagnetic interference (EMI) shielding effectiveness of the polyethersulfone (PES). The S-GOs having numerous terminal -SO(3)(-)groups not only promote the homogeneous dispersion for achieving the low percolation threshold, but also induce strong H-bonding and dipole-dipole interactions at the interfaces. As-prepared S-GO nanosheets showed uniform dispersion in PES matrix with strong adhesion with the polymer matrix via non-bonding interactions. The remarkable enhancement of dielectric permittivity of PES upon inclusion of S-GOs could be attributed to the interfacial polarization effect and microcapacitor model. As-prepared nanocomposites exhibited low conductive percolation threshold. The well-wrapped graphene nanosheets by thin PES layer prevented direct contact of graphene nanosheets and consequently decreased the dielectric loss by suppressing the current leakage. The PES/S-GO nanocomposites exhibited significant improvement in thermal stability with high char yield in N(2)atmosphere compared to pure PES. A high EMI shielding effectiveness of 23.5 dB was achieved for the nanocomposite film with 5 wt% graphene loading, which might be originated from the development of conductive network at higher graphene loading. Overall, the as-prepared PES/S-GO hybrid nanocomposite could be used in DC and radiofrequency electronics.