• 文献标题:   Quantum Diffusion in the Lowest Landau Level of Disordered Graphene
  • 文献类型:   Article
  • 作  者:   SINNER A, TKACHOV G
  • 作者关键词:   lowdimensional semimetal, electronic transport in graphene, quantum hall effect
  • 出版物名称:   NANOMATERIALS
  • ISSN:  
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.3390/nano12101675
  • 出版年:   2022

▎ 摘  要

Electronic transport in the lowest Landau level of disordered graphene sheets placed in a homogeneous perpendicular magnetic field is a long-standing and cumbersome problem which defies a conclusive solution for several years. Because the modeled system lacks an intrinsic small parameter, the theoretical picture is infested with singularities and anomalies. We propose an analytical approach to the conductivity based on the analysis of the diffusive processes, and we calculate the density of states, the diffusion coefficient and the static conductivity. The obtained results are not only interesting from the purely theoretical point of view but have a practical significance as well, especially for the development of the novel high-precision calibration devices.