• 文献标题:   Lithographic band structure engineering of graphene
  • 文献类型:   Article
  • 作  者:   JESSEN BS, GAMMELGAARD L, THOMSEN MR, MACKENZIE DMA, THOMSEN JD, CARIDAD JM, DUEGAARD E, WATANABE K, TANIGUCHI T, BOOTH TJ, PEDERSEN TG, JAUHO AP, BOGGILD P
  • 作者关键词:  
  • 出版物名称:   NATURE NANOTECHNOLOGY
  • ISSN:   1748-3387 EI 1748-3395
  • 通讯作者地址:   Tech Univ Denmark
  • 被引频次:   24
  • DOI:   10.1038/s41565-019-0376-3
  • 出版年:   2019

▎ 摘  要

Two-dimensional materials such as graphene allow direct access to the entirety of atoms constituting the crystal. While this makes shaping by lithography particularly attractive as a tool for band structure engineering through quantum confinement effects, edge disorder and contamination have so far limited progress towards experimental realization. Here, we define a superlattice in graphene encapsulated in hexagonal boron nitride, by etching an array of holes through the heterostructure with minimum feature sizes of 12-15 nm. We observe a magnetotransport regime that is distinctly different from the characteristic Landau fan of graphene, with a sizeable bandgap that can be tuned by a magnetic field. The measurements are accurately described by transport simulations and analytical calculations. Finally, we observe strong indications that the lithographically engineered band structure at the main Dirac point is cloned to a satellite peak that appears due to moire interactions between the graphene and the encapsulating material.