▎ 摘　　要

Graphene oxide (GO) raised substantial interest in the past two decades due to its unique properties beyond those of pristine graphene, including electronic energy bandgap, hydrophilic behavior, and numerous anchoring sites required for functionalization. In addition, GO is found to be a cheap mass-production source for the formation of the pristine graphene. However, the presence of numerous clusters containing oxygen functional groups (called debris) on the GO surface hinders the GO integration in electronic devices. Herein, a simple method aimed to reduce the density of oxygen debris weakly bonded to the surface is presented. The method consists of minimal treatments, like sonication and/or water rinsing processes. Whereas this simple method removed epoxy and hydroxyl oxygen groups weakly attached to the graphene matrix, the double C(sic)O bonds are almost not affected by the applied treatment, as demonstrated by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Scanning tunneling microscopy and high-resolution transmission electron microscopy measure the designated nonuniform distribution of the oxidation sites, appearing as clusters concentrated preferentially on GO-defected regions, albeit separated by pristine graphene areas. The results should have an impact in the implementation of GO in electronic devices deposited on different substrates.