• 文献标题:   Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES
  • 文献类型:   Article
  • 作  者:   WANG EY, CHEN GR, WAN GL, LU XB, CHEN CY, AVILA J, FEDOROV AV, ZHANG GY, ASENSIO MC, ZHANG YB, ZHOU SY
  • 作者关键词:   graphene/hbn, van der waals heterostructure, moire potential, nanoscale angleresolved photoemission spectroscopy nanoarpes
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   Tsinghua Univ
  • 被引频次:   8
  • DOI:   10.1088/0953-8984/28/44/444002
  • 出版年:   2016

▎ 摘  要

In van der Waals heterostructures, the periodic potential from the Moire superlattice can be used as a control knob to modulate the electronic structure of the constituent materials. Here we present a nanoscale angle-resolved photoemission spectroscopy (nano-ARPES) study of transferred graphene/h-BN heterostructures with two different stacking angles of 2.4 degrees and 4.3 degrees respectively. Our measurements reveal six replicas of graphene Dirac cones at the superlattice Brillouin zone (SBZ) centers. The size of the SBZ and its relative rotation angle to the graphene BZ are in good agreement with Moire superlattice period extracted from atomic force microscopy (AFM) measurements. Comparison to the epitaxial graphene/h-BN with 0 degrees stacking angles suggests that the interaction between graphene and h-BN decreases with increasing stacking angle.