• 文献标题:   Magnetization reversal and spintronics of Ni/Graphene/Co induced by doped graphene
  • 文献类型:   Article
  • 作  者:   KIM D, HASHMI A, HWANG C, HONG J
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Pukyong Natl Univ
  • 被引频次:   11
  • DOI:   10.1063/1.4795764
  • 出版年:   2013

▎ 摘  要

We have investigated the magnetization reversal induced by carrier doped graphene (Be, B, N, O, or Cl doping) in Ni/Graphene/Co. In undoped case, the magnetic layers have an antiferromagnetic (AFM) coupling and this is still preserved from Be to O doping. We find magnetization reversal from AFM to ferromagnetic interaction induced by Cl doped graphene. In addition, the Ni and the Co layers show the opposite spin asymmetry near the Fermi level and this implies that each layer will generate completely different in-plane spin current in the same direction if an external electric field is applied. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795764]