▎ 摘　　要

It is well known that in metal-semiconductor rectifier junctions with an interface layer, the drop potential across the interface layer modifies the barrier height by changing the electric field in the semiconductor. Therefore, examining the barrier characteristics of such structures depending on the sample temperature is important in the development of novel devices. Based on this assumption, in order to interpret the barrier characteristics of the Au/Graphene/p-Si/Al structure in detail, its current-voltage (I-V) measurements were measured under dark conditions in the temperature range of 120-320 K in 20 K steps. Graphene thin film was grown on copper foil by plasma-enhanced chemical vapor deposition (PECVD) method and then transferred as an interfacial layer on the clean and polish surface of p-Si semiconductor base material made ohmic contact with aluminum metal. After examining the morphological and optical properties of the produced film, the gold metal was evaporated onto the film under vacuum conditions to have a circular contact area of 1 mm diameter, as it is necessary for electrical measurements. Various characteristic parameters such as ideality factor, barrier height, saturation current, threshold voltage, rectifying ratio, and series resistance of Au/Graphene/p-Si/Al structure were calculated from I-V measurements taken depending on sample temperature using Rhoderick, Norde, Cibils, and Chattopadhyay methods. The obtained results were interpreted comparatively on the basis of Tung's inhomogeneous barrier model.