• 文献标题:   Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   BAYDILLI EE, TAN SO, TECIMER HU, ALTINDAL S
  • 作者关键词:   currenttransport mechanism, metalpolymersemicondutor, thermionic emission, barrier height, graphene doping
  • 出版物名称:   PHYSICA BCONDENSED MATTER
  • ISSN:   0921-4526 EI 1873-2135
  • 通讯作者地址:   Karabuk Univ
  • 被引频次:   0
  • DOI:   10.1016/j.physb.2020.412457
  • 出版年:   2020

▎ 摘  要

The possible current-transport mechanisms (CTMs) of Au/(%7Gr-doped)PVA/n-GaAs structure was examined between 80 K and 360 K. The forward bias semi-logarithmic I-V curves have two different linear regions; as 0.30 V and 0.56 V (Region I), and 0.72 V and 0.92 V (Region II). Contrary to classical thermionic emission (TE) theory, the ideality factor (n) decreases but the zero bias barrier height (Phi(Bo)) increases while the temperature increases for both regions. The plots of n vs Phi(B0), q/2 kT vs Phi(Bo) and q/2 kT vs n(-1)-1 have two linear regions from 80 K to 160 K and 180 K-360 K. This indicates the Double Gaussian Distribution (DGD). Experimental Richardson constant (A*) was acquired as 8.73 A/cm(2)K(2) and 8.14 A/cm(2)K(2) for Region I and II which are quite close to theoretical A* value for n-GaAs. Consequently, the predominant CTMs at M/S interfaces can be clarified by DGD on the basis of TE.