• 文献标题:   A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure
  • 文献类型:   Article
  • 作  者:   HORRI A, FAEZ R, POURFATH M, DARVISH G
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Sharif Univ Technol
  • 被引频次:   4
  • DOI:   10.1063/1.4984145
  • 出版年:   2017

▎ 摘  要

In this paper, for the first time, we present a computational study on electrical characteristics of field effect tunneling transistors based on a vertical graphene-WS2 heterostructure and vertical graphene nanoribbon (GNR)-WS2 heterostructure (VTGNRFET). Our model uses the nonequilibrium Green's function formalism along with an atomistic tight binding (TB) method. The TB parameters are extracted by fitting the bandstructure to first principles results. We show that, due to the advantage of switching between tunneling and thermionic transport regimes, an improvement can be achieved in the electrical characteristics of the device. We find that the increase of the number of WS2 layers enhances the on/off conductance ratio but degrades the intrinsic gate-delay time. The results indicate that the on/off conductance ratio of VTGNRFET increases with decreasing the GNR width. Published by AIP Publishing.