• 文献标题:   Rapid chemical vapor deposition of graphene using methanol as a precursor
  • 文献类型:   Article, Early Access
  • 作  者:   LEE I, NAM J, PARK SJ, BAE DJ, HONG S, KIM KS
  • 作者关键词:   graphene, film, chemical vapor deposition, optical propertie, electronic transport
  • 出版物名称:   CARBON LETTERS
  • ISSN:   1976-4251 EI 2233-4998
  • 通讯作者地址:   Sejong Univ
  • 被引频次:   0
  • DOI:   10.1007/s42823-020-00166-6 EA JUL 2020
  • 出版年:  

▎ 摘  要

In this study, graphene was rapidly grown by chemical vapor deposition using a liquid cell for supplying methanol as a carbon source of graphene. To realize the rapid growth, methanol which is carbon-contained organic solvent was used instead of methane gas, a widely used carbon source for graphene growth. The graphene grown with the growth time as a variable was transferred to a SiO2/Si substrate with an oxide thickness of 300 nm to confirm whether it was grown with full coverage with an optical microscope. The results confirmed a full coverage in 0.5 min of growth. The Raman spectra also confirmed the G-peak position at 1585.0 cm(-1)and an intensity ratio of 2D/G at 2.3 or higher. Concerning electrical transport characteristics, at an induced carrier density of 1 x 10(12) cm(-2), the hole (mu(h)) and electron (mu(e)) mobilities were 1524 cm(2) V-1 s(-1)and 1528 cm(2) V-1 s(-1), respectively. Thus, our study confirmed that high-quality, large-area graphene can be grown within 0.5 min.