• 文献标题:   Interplay between geometrical structure and electronic properties in rippled free-standing graphene
  • 文献类型:   Article
  • 作  者:   PARTOVIAZAR P, NAFARI N, TABAR MRR
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Inst Res Fundamental Sci IPM
  • 被引频次:   20
  • DOI:   10.1103/PhysRevB.83.165434
  • 出版年:   2011

▎ 摘  要

It has been argued that the electron-hole puddles formed on graphene are mostly due to substrate-induced charged impurities [J. Martin et al., Nature Phys. 4, 144 (2008), Y. Zhang et al., Nature Phys. 5, 722 (2009)]. Here, using first-principles ab initio calculations, we show that the existence of ripples and electron-hole puddles is indeed an intrinsic property of graphene at finite temperatures. We found a relatively large correlation between the electronic charge density distribution on the surface of graphene and its local geometrical properties, such as local mean curvature and average bond length. We show that the electron and hole puddles appear in places where curvatures are large and small, respectively. We also determined the average sizes of the observed electron-hole puddles and have reported their percolating nature.