▎ 摘　　要

A graphene transparent electrode might be used in industry in the near future instead of indium tin oxide (ITO). For patterning of ITO, the maskless laser process was reported as a simple and fast process. In this paper, effects of ultra-violet laser irradiation to graphene on SiO2/Si are investigated. The experimental results show that the threshold thickness of graphene for complete removal from the SiO2/Si substrate by laser irradiation is approximately 10 nm. Thinner graphene layers than the threshold thickness were removed by laser irradiation with a power density of larger than approximately 3.5 MW/cm(2). The mechanism for the observed complete removal of graphene should be ejection due to the supersonic elastic vibration of the substrate caused by pulsed laser irradiation. (C) 2013 Elsevier B.V. All rights reserved.