• 文献标题:   Ionic Screening of Charged-Impurity Scattering in Graphene
  • 文献类型:   Article
  • 作  者:   CHEN F, XIA JL, TAO NJ
  • 作者关键词:  
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Arizona State Univ
  • 被引频次:   111
  • DOI:   10.1021/nl803922m
  • 出版年:   2009

▎ 摘  要

We have studied the ionic screening effect on the charge transport properties of graphene field effect transistors. By increasing the ionic concentration, we found dramatic increases in the carrier mobilities and systematic changes in the position and magnitude of minimum conductivity, as well as the width of minimum conductivity plateau, which supports the theory of long-range Coulomb scattering. We also observed clear conductivity saturation and systematic crossover from the linear to constant conductivity regimes.