• 文献标题:   Graphene Quantum Dots-Modified Ternary ZnCdS Semiconductor for Enhancing Photoelectric Properties
  • 文献类型:   Article
  • 作  者:   JIANG ZC, LEI Y, ZHANG MZ, ZHANG Z, OUYANG Z
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF NANOMATERIALS
  • ISSN:   1687-4110 EI 1687-4129
  • 通讯作者地址:   Wuhan Univ Technol
  • 被引频次:   3
  • DOI:   10.1155/2019/6042026
  • 出版年:   2019

▎ 摘  要

A series of graphene quantum dots-modified ZnCdS (ZnCdS/G) composites with different contents of graphene quantum dots (GQDs) were prepared by a solvothermal route and characterized via various measurements. GQDs have a type graphene height of 2nm and exhibit an excitation-dependent PL behavior. GQDs-modified ZnCdS composites present good lattice fingers that can be assigned to the (110) plane of GQDs and (112) plane of ZnCdS. The effect of different GQDs contents on the photoelectric property of ZnCdS was investigated. The results show that the photocurrent density of ZnCdS/G first increases and achieves a maximum of 11.4 A/cm(2) with the addition of 0.06wt% and then decreases as the GQDs content changes from 0.06wt% to 0.12wt%. Photocurrent counts as a function of time present a decrease of 10% and remains stable after 1600s.