▎ 摘　　要

The present work aims to investigate the crystallization behavior of VS55 in the presence of graphene oxide (GO) by Differential Scanning Calorimetry (DSC) and Cryomicroscopy system. The DSC results show that the higher GO concentration increase crystallization enthalpy H-f for 2.1 M&4.2 M VS55 but has little effects on 8.4 M VS55 during cooling processes. The recrystallization enthalpy H-Td of VS55 + GO decreased with increasing concentrations of GO during warming processes significantly. Especially, when increasing both cooling and warming rates, the H-Td of VS55 drops more obviously once adding higher concentration of GO, which indicates that the critical cooling rate and warming rate may be smaller for the purpose of practical application. The Cryomicroscopy results show that the crystal regrowth can be watched only for high concentration VS55 (i.e. 8.4 M) due to devitrification, and the growth rates become smaller when increasing cooling rates as well as GO concentration, which certainly confirms the results of DSC.