▎ 摘　　要

Graphene oxide (GO) is a two-dimensional material with a high light transmittance. The conductivity of GO can be altered by applying an electrical signal, which can be used in nonvolatile resistive switching memories. In this work, the effects of the GO oxygenated level on resistive switching properties are studied. The GO-based device with a higher oxygenated level exhibits better resistive switching properties. The transmittance of the GO-based device is demonstrated. A possible resistive switching model and band diagrams of the GO-based device are also proposed. The reported GO-based resistive switching memory device can possibly be used in new-generation nonvolatile memory and transparent devices. (C) 2017 The Japan Society of Applied Physics